服务介绍
随着技术发展，第三代半导体功率器件开始由实验室阶段步入商业应用，未来应用潜力巨大，这些新型器件测试要求更高的电压和功率水平，更快的开关时间。
测试周期：
根据标准、试验条件及被测样品量确定
产品范围：
MOSFET、IGBT、DIODE、BJT，第三代半导体器件等分立器件，以及上述元件构成的功率模块
测试项目：
静态参数符号
Drain to Source BreakdownVoltageBVDSS
Drain Leakage CurrentIDSS
Gate Leakage CurrentIGSS
Gate Threshold VoltageVGS(th)
Drain to Source OnResistanceRDS(on)
Drain to Source On VoltageVDS(on)
Body Diode Forward VoltageVSD
Internal Gate ResistanceRg
Input capacitanceCies
Output capacitanceCoes
Reverse transfer capacitanceCres
Transconductancegfs
Gate to Source PlateauVoltageVgs(pl)
动态参数符号
Turn-on delay timetd(on)
Rise timetr
Turn-off delay timetd(off)
Fall timetf
Turn-on energyEon
Turn-off energyEoff
Diode reverse recovery timetrr
Diode reverse recovery chargeQrr
Diode peak reverse recoverycurrentIrrm
Diode peak rate of fall of reverse
recovery currentdirr/dt
Total gate chargeQG
Gate-Emitter chargeQGC
Gate-Collector chargeQGE
其他参数符号
thermal resistanceRth
Unclamped Inductive SwitchingUIS
Reverse biased safe operatingareaRBSOA
Short circuit safe operationareaSCSOA
