GeneralDescription
The HS271 Omnipolar Hall effect sensor IC is fabricated frommixed signal CMOS technology. It incorporates advancedchopper-stabilization techniques to provide accurate and stablemagnetic switch points.
The circuit design provides an internally controlled clockingmechanism to cycle power to the Hall element and analog signalprocessing circuits.This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically thedevice is “Awakened” by this internal logic and the magnetic fluxfrom the Hall element is evaluated against the predefinedthresholds. If the flux density is above or below the B OP/BRPthresholds then the output transistor is driven to change statesaccordingly. While in the “Sleep” cycle the output transistor islatched in its previous state. The design has been optimized forservice in applications re extended operating lifetime inbattery powered systems.
The output transistor of the HS271 will be latched on (BOP) inthe presence of a sufficiently strong South or North magnetic fieldfacing the marked side of the package. The output will be latchedoff (BRP) in the absence of amagnetic field.It incorporatesadvanced chopper-stabilization techniques to provide accurate andstable magnetic switch points.
Featrues
CMOS output
Micropower consumption for battery powered applications
Output switches with absolute value of North or South polefrom magnet
Operation down to 2.5V
High sensitivity for direct reed switch replacementapplications
Ultra Low power consumption at 40uA (Avg)
High ESD Protection, HMB > ±4KV( min )