品牌
捷捷微
漏源电压(Vdss)
100 V
连续漏极电流(Id)
3 A
功率(Pd)
2.1 W
导通电阻
146 mΩ(VGS=10V, ID=3A)
阈值电压(Vgs(th)@Id)
2.5 V
栅极电荷(Qg@Vgs)
4.3 nC
输入电容(Ciss@Vds)
150 pF
反向传输电容(Crss@Vds)
6 pF
工作温度
-55 to +150 ℃
包装
卷
小包装量
3000
数量
30000
封装
SOT-23
批号
2023
类型
N沟道
型号
JMGL3V10A
产品参数
品类：MOS管型号：JMGL3V10AFTE型：N 管电压：100 V电流：3 A内阻：146 mΩ封装：SOT-23应用于开关电源，UPS电源、网络通讯设备
Electrical Characteristics (TJ=25℃ unless otherwise specified)Symbol Parameter Test Condition Min. Typ. Max. UnitsOffCharacteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 100 - - VIDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V, - - 1.0μAIGSS Gate to Body Leakage Current VDS=0V, VGS=±20V- - ±100nAOn Characteristics VGS(th) Gate Threshold VoltageVDS=VGS, ID=250μA 1 1.7 2.5VRDS(on) Static Drain-Sourceon-Resistance Note2 VGS=10V, ID=3A - 112 146mΩVGS=4.5V, ID=2A 131182mΩDynamic Characteristics Ciss Input Capacitance VDS=50V,VGS=0V, f=1.0MHz - 150 - pFCoss Output Capacitance - 34 - pFCrssReverse Transfer Capacitance - 6 - pFQg Total Gate Charge VDS=50V,ID=3A, VGS=10V - 4.3 - nCQgs Gate-Source Charge - 1.5 - nCQgdGate-Drain(“Miller”) Charge - 1.1 - nCSwitching Characteristicstd(on) Turn-on Delay Time VDD=50V, ID=3A, RGEN =2Ω,VGS=10V - 14.7 -nstr Turn-on Rise Time - 3.5 - nstd(off) Turn-off Delay Time - 20.9- nstf Turn-off Fall Time - 2.7 - nsDrain-Source DiodeCharacteristics and Maximum Ratings IS Maximum Continuous Drain toSource Diode Forward Current - - 3AISM Maximum Pulsed Drain toSource Diode Forward Current - - 12AVSD Drain to Source DiodeForward Voltage VGS=0V, IS=3A - - 1.2Vtrr Body Diode ReverseRecovery Time IF=3A, dI/dt=100A/μs - 32 - nsQrr Body Diode ReverseRecovery Charge - 39 - nCNotes:1. Repetitive Rating: Pulse WidthLimited by Maximum Junction Temperature 2. Pulse Test: PulseWidth≤300μs, Duty Cycle≤0.5%
