Description
The YF2310 uses advanced trench technology to provide excellentRDS(ON) and low gate charge . The complementary MOSFETs may be usedto form a level shifted high side switch, and for a host of otherapplications.
General Features
● N-Channel VDS = 20V,ID =6A
RDS(ON) < 14mΩ @ VGS=4.5V
RDS(ON) < 16mΩ @ VGS=2.5V