Overview
The EM6AA160SDRAM is a high-speed CMOS double datarate synchronous DRAM containing 256 Mbits. It isinternally configured as a quad 4M x 16 DRAM with asynchronous interface (all signals are registered onthe positive edge of the clock signal, CK). Dataoutputs occur at both rising edges of CK and CK.Read and write accesses to the SDRAM are burstoriented; accesses start at a selected location and continuefor a programmed number of locations in aprogrammed se Accesses begin with the registrationof a BankActivate command which is then followedby a Read or Write command. The EM6AA160provides programmable Read or Write burst lengthsof 2, 4, or 8. An auto precharge function may be enabledto provide a self-timed row precharge that isinitiated at the end of the burst se The refreshfunctions, either Auto or Self Refresh are easy to use. Inaddition, EM6AA160 features programmable DLL option. Byhaving a programmable mode register and extendedmode register, the system can choose the mostsuitable modes to maximize its performance. These devicesare well suited for applications re high memorybandwidth; result in a device particularly wellsuited to high performance main memory and graphicsapplications.
