随着技术的进步，各类半导体功率器件开始由实验室阶段走向商业应用，尤其以SiC为代表的第三代半导体器件国产化的脚步加快。但车用分立器件市场均被国外巨头所把控，国产器件很难分一杯羹，主要的原因之一即是可靠性得不到认可。
测试周期：
2-3个月，提供全面的知识分享计划、测试等服务
产品范围：二、三极管、晶体管、MOS、IBGT、TVS管、Zener、闸流管等半导体分立器件
测试项目：序号测试项目缩写样品数/批批数测试方法1Pre- and Post-Stress Electrical andPhotometricTestTEST所有应力试验前后均进行测试用户规范或供应商的标准规范2Pre-conditioningPCSMD产品在7、8、9和10试验前预处理JESD22-A1133ExternalVisualEV每项试验前后均进行测试JESD22-B1014Parametric VerificationPV253 NoteA用户规范5High TemperatureReverse BiasHTRB773 Note BMIL-STD-750-1
M1038 Method A5aAC blocking
voltageACBV773 Note BMIL-STD-750-1
M1040 Test Condition A5bHigh Temperature
Forward BiasHTFB773 Note BJESD22
A-1085cSteady State
OperationalSSOP773 Note BMIL-STD-750-1
M1038 Condition B（Zeners）6High Temperature
Gate BiasHTGB773 Note BJESD22
A-1087Temperature
CyclingTC773 Note BJESD22
A-104
Appendix 67aTemperature
Cycling Hot TestTCHT773 Note BJESD22
A-104
Appendix 67a
altTC Delamination
TestTCDT773 Note BJESD22
A-104
Appendix 6
J-STD-0357bWire Bond IntegrityWBI53 Note BMIL-STD-750
Method 20378Unbiased Highly
Accelerated Stress
TestUHAST773 Note BJESD22
A-1188
altAutoclaveAC773 Note BJESD22
A-1029Highly Accelerated
Stress TestHAST773 Note BJESD22
A-1109
altHigh Humidity
High Temp.
Reverse BiasH3TRB773 Note BJESD22
A-10110Intermittent
Operational LifeIOL773 Note BMIL-STD-750
Method 103710
altPower and
Temperature CyclePTC773 Note BJESD22
A-10511ESD
CharacterizationESD30 HBM1AEC--tive
Physical AnalysisDPA21 NoteBAEC-Q101-004
Section 413Physical
DimensionPD301JESD22
B-10014Terminal StrengthTS301MIL-STD-750
Method 203615Resistance to
SolventsRTS301JESD22
B-10716Constant AccelerationCA301MIL-STD-750
Method 200617Vibration Variable
Fre项目16至19是密封包装的顺序测试。 （请参阅图例页面上的注释H.）JEDEC
JESD22-B10318Mechanical
ShockMS
JEDEC
JESD22-B10419HermeticityHER
JESD22-A10920Resistance to
Solder HeatRSH301JESD22
A-111 (SMD)
B-106 (PTH)21SolderabilitySD101 Note BJ-STD-002
JESD22B10222Thermal
ResistanceTR101JESD24-3,24-4,26-6视情况而定23Wire Bond
StrengthWBS少5个器件的10条焊线1MIL-STD-750
Method 203724Bond ShearBS少5个器件的10条焊线1AEC-rDS51MIL-STD-750Method 201726Unclamped
Inductive
SwitchingUIS51AEC-Q101-004
Section 227Dielectric IntegrityDI51AEC-Q101-004
Section 328Short Circuit
Reliability
CharacterizationSCR103 Note BAEC- FreeLF
AEC-Q005
